* E SEATING PLANE F DIM A B C D E F G H K N Q R STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465
* 04 ISSUE D (MRF286) RADIUS U 4 PL 1 RADIUS 4 PL S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030”
MRF286S
Motorola
234.49 KB
The rf sub-micron mosfet line rf power field effect transistors.
www.DataSheet4U.com
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document from WISD RF Marketing
The RF Sub
*Micron MOSFET Line
RF Pow.
📁 Related Datasheet
MRF286 The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors (Motorola)
MRF281SR1 RF POWER FIELD EFFECT TRANSISTORS (Motorola)
MRF281ZR1 RF POWER FIELD EFFECT TRANSISTORS (Motorola)
MRF282S LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs (Motorola)
MRF282SR1 RF Power Field Effect Transistors (NXP)
MRF282Z LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs (Motorola)
MRF282ZR1 RF Power Field Effect Transistors (NXP)
MRF284 RF Power Field-Effect Transistors (Motorola)
MRF284LR1 RF Power Field Effect Transistors (Freescale Semiconductor)
MRF284LSR1 RF Power Field Effect Transistors (Freescale Semiconductor)
