MTB55N06Z Datasheet (Motorola)

MTB55N06Z, TMOS POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB55N06Z/D Advance Information TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount N Channel Enhancement Mode Silicon Gate This advanced high voltage TMOS E FET is designed to withstand high energy in the avalanche mode and switch efficiently.

This new high energy device also offers a drain to source diode with fast recovery time.

Designed for high voltage, high speed switching applic

MTB55N06Z Features

* ct or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over t