* n 4 Motorola TMOS Power MOSFET Transistor Device Data MTY100N10E VDS , DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) VGS, GATE
* TO
* SOURCE VOLTAGE (VOLTS) 12 QT 10 VGS 8 Q1 6 4 2 0 Q3 0 50 100 150 200 VDS 250 Qg, TOTAL GATE CHARGE (nC) TJ = 25°C ID = 100 A Q2 60 40 20 0 300 80 100
MTY100N10E Datasheet (216.62 KB)
MTY100N10E
Motorola
216.62 KB
Tmos power fet 100 amperes 100 volts rds(on) = 0.011 ohm.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY100N10E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTY10.
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MT-10 Low Ohm Power Resistors (Riedon)
