MTY100N10E TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM

Motorola

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY100N10E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTY10.

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Datasheet Specifications

Part number: MTY100N10E
Manufacturer: Motorola
File Size: 216.62 KB
Datasheet: MTY100N10E_Motorola.pdf
Description: TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM

Features

* n 4 Motorola TMOS Power MOSFET Transistor Device Data MTY100N10E VDS , DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) VGS, GATE
* TO
* SOURCE VOLTAGE (VOLTS) 12 QT 10 VGS 8 Q1 6 4 2 0 Q3 0 50 100 150 200 VDS 250 Qg, TOTAL GATE CHARGE (nC) TJ = 25°C ID = 100 A Q2 60 40 20 0 300 80 100

Applications

* in power supplies, converters, PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
* Avalanche Energy Spe

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MTY100N10E TMOS POWER FET 100 AMPERES 100 VOLTS RDSon 0.011 OHM Motorola

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