MTY100N10E TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM

Motorola

MTY100N10E Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY100N10E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTY10.

MTY100N10E Features

* n 4 Motorola TMOS Power MOSFET Transistor Device Data MTY100N10E VDS , DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) VGS, GATE
* TO
* SOURCE VOLTAGE (VOLTS) 12 QT 10 VGS 8 Q1 6 4 2 0 Q3 0 50 100 150 200 VDS 250 Qg, TOTAL GATE CHARGE (nC) TJ = 25°C ID = 100 A Q2 60 40 20 0 300 80 100

MTY100N10E Applications

* in power supplies, converters, PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
* Avalanche Energy Spe

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Datasheet Details

Part number: MTY100N10E
Manufacturer: Motorola
File Size: 216.62 KB
Datasheet: MTY100N10E_Motorola.pdf
Description: TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM

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TMOS POWER FET 100 AMPERES 100 VOLTS RDSon 0.011 OHM Motorola

Motorola MTY100N10E-like datasheet

MTY10N100E - TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM
MTY14N100E - TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM
MTY16N80E - TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM
MTY25N60E - TMOS POWER FET 25 AMPERES 600 VOLTS RDS(on) = 0.21 OHM
MTY30N50E - TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM
MTY55N20E - TMOS POWER FET 55 AMPERES 200 VOLTS RDS(on) = 0.028 OHM