MTY100N10E Datasheet (Motorola) - TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM

MTY100N10E, TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY100N10E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTY100N10E Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes.

This new energy efficient design also offers a drain to source diode with fast recovery time.

Designed for high voltage, high speed switchi

MTY100N10E Features

* n 4 Motorola TMOS Power MOSFET Transistor Device Data MTY100N10E VDS , DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) VGS, GATE

* TO

* SOURCE VOLTAGE (VOLTS) 12 QT 10 VGS 8 Q1 6 4 2 0 Q3 0 50 100 150 200 VDS 250 Qg, TOTAL GATE CHARGE (nC) TJ = 25°C ID = 100 A Q2 60 40 20 0 300 80 100