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MTY30N50E Datasheet - Motorola

MTY30N50E TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY30N50E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTY30N50E Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain to source diode with fast recovery time. Designed for high voltage, high speed switching.

MTY30N50E Features

* OLTS) 1000 GATE

* TO

* SOURCE OR DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) Figure 7a. Capacitance Variation Figure 7b. High Voltage Capacitance Variation 4 Motorola TMOS Power MOSFET Transistor Device Data MTY30N50E VDS , DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) VGS,

MTY30N50E Datasheet (237.97 KB)

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Datasheet Details

Part number:

MTY30N50E

Manufacturer:

Motorola

File Size:

237.97 KB

Description:

Tmos power fet 30 amperes 500 volts rds(on) = 0.15 ohm.

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TAGS

MTY30N50E TMOS POWER FET AMPERES 500 VOLTS RDSon 0.15 OHM Motorola

MTY30N50E Distributor