* OLTS) 1000 GATE
* TO
* SOURCE OR DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) Figure 7a. Capacitance Variation Figure 7b. High Voltage Capacitance Variation 4 Motorola TMOS Power MOSFET Transistor Device Data MTY30N50E VDS , DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) VGS,
MTY30N50E Datasheet (237.97 KB)
MTY30N50E
Motorola
237.97 KB
Tmos power fet 30 amperes 500 volts rds(on) = 0.15 ohm.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY30N50E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTY30N.
📁 Related Datasheet
MTY100N10E TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM (Motorola)
MTY10N100E TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM (Motorola)
MTY14N100E TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM (Motorola)
MTY14N100E Power Field Effect Transistor (ON Semiconductor)
MTY16N80E TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM (Motorola)
MTY16N80E Power Field Effect Transistor (ON Semiconductor)
MTY20N50E Power MOSFET (ON Semiconductor)
MTY25N60E TMOS POWER FET 25 AMPERES 600 VOLTS RDS(on) = 0.21 OHM (Motorola)
MTY55N20E TMOS POWER FET 55 AMPERES 200 VOLTS RDS(on) = 0.028 OHM (Motorola)
MT-10 Low Ohm Power Resistors (Riedon)
