MTY30N50E TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM

Motorola

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY30N50E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTY30N.

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Datasheet Specifications

Part number: MTY30N50E
Manufacturer: Motorola
File Size: 237.97 KB
Datasheet: MTY30N50E_Motorola.pdf
Description: TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM

Features

* OLTS) 1000 GATE
* TO
* SOURCE OR DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) Figure 7a. Capacitance Variation Figure 7b. High Voltage Capacitance Variation 4 Motorola TMOS Power MOSFET Transistor Device Data MTY30N50E VDS , DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) VGS,

Applications

* in power supplies, converters, PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
* Avalanche Energy Spe

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MTY30N50E TMOS POWER FET AMPERES 500 VOLTS RDSon 0.15 OHM Motorola

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