Datasheet4U Logo Datasheet4U.com

MTY20N50E Datasheet - ON Semiconductor

MTY20N50E Power MOSFET

MTY20N50E Preferred Device Power MOSFET 20 Amps, 500 Volts N Channel TO 264 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are .

MTY20N50E Features

* pacitance Variation 10000 VGS = 0 V 1000 TJ = 25°C Ciss 100 10 10 Coss Crss 100 1000 VDS, DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) Figure 7b. High Voltage Capacitance Variation http://onsemi.com 4 VGS, GATE

* TO

* SOURCE VOLTAGE (VOLTS) MTY20N50E 10 8 Q1 6 QT Q2 VGS 500

MTY20N50E Datasheet (204.95 KB)

Preview of MTY20N50E PDF
MTY20N50E Datasheet Preview Page 2 MTY20N50E Datasheet Preview Page 3

Datasheet Details

Part number:

MTY20N50E

Manufacturer:

ON Semiconductor ↗

File Size:

204.95 KB

Description:

Power mosfet.

📁 Related Datasheet

MTY25N60E TMOS POWER FET 25 AMPERES 600 VOLTS RDS(on) = 0.21 OHM (Motorola)

MTY100N10E TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM (Motorola)

MTY10N100E TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM (Motorola)

MTY14N100E TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM (Motorola)

MTY14N100E Power Field Effect Transistor (ON Semiconductor)

MTY16N80E TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM (Motorola)

MTY16N80E Power Field Effect Transistor (ON Semiconductor)

MTY30N50E TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM (Motorola)

MTY55N20E TMOS POWER FET 55 AMPERES 200 VOLTS RDS(on) = 0.028 OHM (Motorola)

MT-10 Low Ohm Power Resistors (Riedon)

TAGS

MTY20N50E Power MOSFET ON Semiconductor

MTY20N50E Distributor