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MTY14N100E Datasheet - Motorola

MTY14N100E TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY14N100E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTY14N100E Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain to source diode with fast recovery time. Designed for high voltage, high speed switchi.

MTY14N100E Features

* DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) 1000 GATE

* TO

* SOURCE OR DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) Figure 7a. Capacitance Variation Figure 7b. High Voltage Capacitance Variation 4 Motorola TMOS Power MOSFET Transistor Device Data MTY14N100E VGS, GATE

MTY14N100E Datasheet (232.77 KB)

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Datasheet Details

Part number:

MTY14N100E

Manufacturer:

Motorola

File Size:

232.77 KB

Description:

Tmos power fet 14 amperes 1000 volts rds(on) = 0.80 ohm.

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MTY14N100E TMOS POWER FET AMPERES 1000 VOLTS RDSon 0.80 OHM Motorola

MTY14N100E Distributor