* DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) 1000 GATE
* TO
* SOURCE OR DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) Figure 7a. Capacitance Variation Figure 7b. High Voltage Capacitance Variation 4 Motorola TMOS Power MOSFET Transistor Device Data MTY14N100E VGS, GATE
MTY14N100E Datasheet (232.77 KB)
MTY14N100E
Motorola
232.77 KB
Tmos power fet 14 amperes 1000 volts rds(on) = 0.80 ohm.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY14N100E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTY14.
📁 Related Datasheet
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MTY25N60E TMOS POWER FET 25 AMPERES 600 VOLTS RDS(on) = 0.21 OHM (Motorola)
MTY30N50E TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM (Motorola)
MTY55N20E TMOS POWER FET 55 AMPERES 200 VOLTS RDS(on) = 0.028 OHM (Motorola)
MT-10 Low Ohm Power Resistors (Riedon)
