MTY14N100E TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM

Motorola

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY14N100E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTY14.

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Datasheet Specifications

Part number: MTY14N100E
Manufacturer: Motorola
File Size: 232.77 KB
Datasheet: MTY14N100E_Motorola.pdf
Description: TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM

Features

* DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) 1000 GATE
* TO
* SOURCE OR DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) Figure 7a. Capacitance Variation Figure 7b. High Voltage Capacitance Variation 4 Motorola TMOS Power MOSFET Transistor Device Data MTY14N100E VGS, GATE

Applications

* in power supplies, converters, PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
* Avalanche Energy Spe

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MTY14N100E TMOS POWER FET AMPERES 1000 VOLTS RDSon 0.80 OHM Motorola

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