MTY55N20E Datasheet (Motorola) - TMOS POWER FET 55 AMPERES 200 VOLTS RDS(on) = 0.028 OHM

MTY55N20E, TMOS POWER FET 55 AMPERES 200 VOLTS RDS(on) = 0.028 OHM

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY55N20E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTY55N20E Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes.

This new energy efficient design also offers a drain to source diode with fast recovery time.

Designed for high voltage, high speed switching

MTY55N20E Features

* nce Variation 4 Motorola TMOS Power MOSFET Transistor Device Data MTY55N20E VDS , DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) VGS, GATE

* TO

* SOURCE VOLTAGE (VOLTS) 12 10 8 6 4 2 0 Q3 0 50 100 150 VDS 200 Qg, TOTAL GATE CHARGE (nC) Q2 Q1 TJ = 25°C ID = 55 A 240 200 VGS 160 120 80