MTY55N20E TMOS POWER FET 55 AMPERES 200 VOLTS RDS(on) = 0.028 OHM

Motorola

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY55N20E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTY55N.

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Datasheet Specifications

Part number: MTY55N20E
Manufacturer: Motorola
File Size: 231.42 KB
Datasheet: MTY55N20E_Motorola.pdf
Description: TMOS POWER FET 55 AMPERES 200 VOLTS RDS(on) = 0.028 OHM

Features

* nce Variation 4 Motorola TMOS Power MOSFET Transistor Device Data MTY55N20E VDS , DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) VGS, GATE
* TO
* SOURCE VOLTAGE (VOLTS) 12 10 8 6 4 2 0 Q3 0 50 100 150 VDS 200 Qg, TOTAL GATE CHARGE (nC) Q2 Q1 TJ = 25°C ID = 55 A 240 200 VGS 160 120 80

Applications

* in power supplies, converters, PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
* Avalanche Energy Spe

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MTY55N20E TMOS POWER FET AMPERES 200 VOLTS RDSon 0.028 OHM Motorola

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