* nce Variation 4 Motorola TMOS Power MOSFET Transistor Device Data MTY55N20E VDS , DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) VGS, GATE
* TO
* SOURCE VOLTAGE (VOLTS) 12 10 8 6 4 2 0 Q3 0 50 100 150 VDS 200 Qg, TOTAL GATE CHARGE (nC) Q2 Q1 TJ = 25°C ID = 55 A 240 200 VGS 160 120 80
MTY55N20E Datasheet (231.42 KB)
MTY55N20E
Motorola
231.42 KB
Tmos power fet 55 amperes 200 volts rds(on) = 0.028 ohm.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY55N20E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTY55N.
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