MTY55N20E Datasheet - Motorola

MTY55N20E TMOS POWER FET 55 AMPERES 200 VOLTS RDS(on) = 0.028 OHM

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY55N20E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTY55N20E Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain to source diode with fast recovery time. Designed for high voltage, high speed switching.

MTY55N20E Features

* nce Variation 4 Motorola TMOS Power MOSFET Transistor Device Data MTY55N20E VDS , DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) VGS, GATE

* TO

* SOURCE VOLTAGE (VOLTS) 12 10 8 6 4 2 0 Q3 0 50 100 150 VDS 200 Qg, TOTAL GATE CHARGE (nC) Q2 Q1 TJ = 25°C ID = 55 A 240 200 VGS 160 120 80

MTY55N20E Datasheet (231.42 KB)

MTY55N20E Datasheet Preview — Preview of MTY55N20E PDF

Datasheet Details

Part number:

MTY55N20E

Manufacturer:

Motorola

File Size:

231.42 KB

Description:

Tmos power fet 55 amperes 200 volts rds(on) = 0.028 ohm.

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MTY55N20E TMOS POWER FET AMPERES 200 VOLTS RDSon 0.028 OHM Motorola

MTY55N20E Distributor