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MTY25N60E Datasheet - Motorola

MTY25N60E TMOS POWER FET 25 AMPERES 600 VOLTS RDS(on) = 0.21 OHM

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY25N60E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTY25N60E Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain to source diode with fast recovery time. Designed for high voltage, high speed switching.

MTY25N60E Features

* E (VOLTS) 1000 GATE

* TO

* SOURCE OR DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) Figure 7a. Capacitance Variation Figure 7b. High Voltage Capacitance Variation 4 Motorola TMOS Power MOSFET Transistor Device Data MTY25N60E VDS , DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) V

MTY25N60E Datasheet (236.99 KB)

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Datasheet Details

Part number:

MTY25N60E

Manufacturer:

Motorola

File Size:

236.99 KB

Description:

Tmos power fet 25 amperes 600 volts rds(on) = 0.21 ohm.

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TAGS

MTY25N60E TMOS POWER FET AMPERES 600 VOLTS RDSon 0.21 OHM Motorola

MTY25N60E Distributor