MTY25N60E TMOS POWER FET 25 AMPERES 600 VOLTS RDS(on) = 0.21 OHM

Motorola

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY25N60E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTY25N.

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Datasheet Specifications

Part number: MTY25N60E
Manufacturer: Motorola
File Size: 236.99 KB
Datasheet: MTY25N60E_Motorola.pdf
Description: TMOS POWER FET 25 AMPERES 600 VOLTS RDS(on) = 0.21 OHM

Features

* E (VOLTS) 1000 GATE
* TO
* SOURCE OR DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) Figure 7a. Capacitance Variation Figure 7b. High Voltage Capacitance Variation 4 Motorola TMOS Power MOSFET Transistor Device Data MTY25N60E VDS , DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) V

Applications

* in power supplies, converters, PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
* Avalanche Energy Spe

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MTY25N60E TMOS POWER FET AMPERES 600 VOLTS RDSon 0.21 OHM Motorola

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