MTY25N60E Datasheet (Motorola) - TMOS POWER FET 25 AMPERES 600 VOLTS RDS(on) = 0.21 OHM

MTY25N60E, TMOS POWER FET 25 AMPERES 600 VOLTS RDS(on) = 0.21 OHM

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY25N60E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTY25N60E Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes.

This new energy efficient design also offers a drain to source diode with fast recovery time.

Designed for high voltage, high speed switching

MTY25N60E Features

* E (VOLTS) 1000 GATE

* TO

* SOURCE OR DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) Figure 7a. Capacitance Variation Figure 7b. High Voltage Capacitance Variation 4 Motorola TMOS Power MOSFET Transistor Device Data MTY25N60E VDS , DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) V