MTY10N100E Datasheet (Motorola) - TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM

MTY10N100E, TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY10N100E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTY10N100E Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without degrading performance over time.

In addition, this advanced TMOS E FET is designed to withstand high energy in the avalanche and

MTY10N100E Features

* into an inductive load; however, snubbing reduces switching losses. 8000 VDS = 0 V 7000 C, CAPACITANCE (pF) 6000 Ciss VGS = 0 V TJ = 25°C 10000 VGS = 0 V Ciss TJ = 25°C C, CAPACITANCE (pF) 5000 4000 3000 2000 1000 Crss 0 10 5 VGS 0 VDS 5 10 15 20 25 Coss Crss Ciss 1000 Coss 100 Crss 10 10 1