MTY10N100E TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM

Motorola

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY10N100E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTY10.

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Datasheet Specifications

Part number: MTY10N100E
Manufacturer: Motorola
File Size: 228.66 KB
Datasheet: MTY10N100E_Motorola.pdf
Description: TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM

Features

* into an inductive load; however, snubbing reduces switching losses. 8000 VDS = 0 V 7000 C, CAPACITANCE (pF) 6000 Ciss VGS = 0 V TJ = 25°C 10000 VGS = 0 V Ciss TJ = 25°C C, CAPACITANCE (pF) 5000 4000 3000 2000 1000 Crss 0 10 5 VGS 0 VDS 5 10 15 20 25 Coss Crss Ciss 1000 Coss 100 Crss 10 10 1

Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* R

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MTY10N100E TMOS POWER FET AMPERES 1000 VOLTS RDSon 1.3 OHM Motorola

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