MTY16N80E TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM

Motorola

MTY16N80E Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY16N80E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTY16N.

MTY16N80E Features

* 000 Coss 0 10 Crss 5 VGS 0 VDS 5 10 15 20 25 10 10 100 VDS, DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) 1000 GATE
* TO
* SOURCE OR DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) Figure 7a. Capacitance Variation Figure 7b. High Voltage Capacitance Variation 4 Motorola TMOS P

MTY16N80E Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* R

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Datasheet Details

Part number: MTY16N80E
Manufacturer: Motorola
File Size: 239.48 KB
Datasheet: MTY16N80E_Motorola.pdf
Description: TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM

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TMOS POWER FET AMPERES 800 VOLTS RDSon 0.50 OHM Motorola

Motorola MTY16N80E-like datasheet

MTY100N10E - TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM
MTY10N100E - TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM
MTY14N100E - TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM
MTY25N60E - TMOS POWER FET 25 AMPERES 600 VOLTS RDS(on) = 0.21 OHM
MTY30N50E - TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM
MTY55N20E - TMOS POWER FET 55 AMPERES 200 VOLTS RDS(on) = 0.028 OHM