MTY16N80E Datasheet - Motorola

MTY16N80E TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY16N80E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTY16N80E Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without degrading performance over time. In addition, this advanced TMOS E FET is designed to withstand high energy in the avalanche and c.

MTY16N80E Features

* 000 Coss 0 10 Crss 5 VGS 0 VDS 5 10 15 20 25 10 10 100 VDS, DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) 1000 GATE

* TO

* SOURCE OR DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) Figure 7a. Capacitance Variation Figure 7b. High Voltage Capacitance Variation 4 Motorola TMOS P

MTY16N80E Datasheet (239.48 KB)

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Datasheet Details

Part number:

MTY16N80E

Manufacturer:

Motorola

File Size:

239.48 KB

Description:

Tmos power fet 16 amperes 800 volts rds(on) = 0.50 ohm.

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MTY16N80E TMOS POWER FET AMPERES 800 VOLTS RDSon 0.50 OHM Motorola

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