MTY16N80E TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM

Motorola

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY16N80E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTY16N.

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Datasheet Specifications

Part number: MTY16N80E
Manufacturer: Motorola
File Size: 239.48 KB
Datasheet: MTY16N80E_Motorola.pdf
Description: TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM

Features

* 000 Coss 0 10 Crss 5 VGS 0 VDS 5 10 15 20 25 10 10 100 VDS, DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) 1000 GATE
* TO
* SOURCE OR DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) Figure 7a. Capacitance Variation Figure 7b. High Voltage Capacitance Variation 4 Motorola TMOS P

Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* R

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MTY16N80E TMOS POWER FET AMPERES 800 VOLTS RDSon 0.50 OHM Motorola

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