MTY16N80E Datasheet (Motorola) - TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM

MTY16N80E, TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY16N80E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTY16N80E Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without degrading performance over time.

In addition, this advanced TMOS E FET is designed to withstand high energy in the avalanche and c

MTY16N80E Features

* 000 Coss 0 10 Crss 5 VGS 0 VDS 5 10 15 20 25 10 10 100 VDS, DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) 1000 GATE

* TO

* SOURCE OR DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) Figure 7a. Capacitance Variation Figure 7b. High Voltage Capacitance Variation 4 Motorola TMOS P