2N6308 - Transistor

Multicomp

Datasheet Details

High voltage, TO-3, NPN, Silicon, Power Transistor. operated amplifier applications.

Low Collector Emitter Saturation Voltage : VCE(sat) 1.5V(Max. ) @ IC - 3A.
Current Gain-bandwidth Product : 5MHz (Min. ) @ IC - 0.3A Absolute Maximum Ratings: Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Continuous Collector Current, IC Base Current IB Total Device Dissipation (TC = +25°C), PD Derate above 25°C Operating Junction Temperature Range, TJ Storage Temperature Range, Tstg : 700V : 350V : 8V : 8A : 4A : 125W :.

📁 2N6308 Similar Datasheet

2N6300 - NPN Darlington Power Silicon Transistor (VPT)
2N6301 - NPN Darlington Power Silicon Transistor (VPT)
2N6302 - Bipolar NPN Device (Seme LAB)
2N6303 - Silicon PNP Power Transistors (Microsemi Corporation)
2N6304 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS (Microsemi Corporation)
2N6305 - HIGH FREQUENCY TRANSISTOR (Motorola)
2N6306 - NPN POWER SILICON TRANSISTOR (Microsemi Corporation)
2N6307 - NPN SILICON TRANSISTOR (Central Semiconductor Corp)

Other Datasheets by Multicomp

Published: Jun 29, 2017 |