NCE0157T Datasheet, Mosfet, NCE Power Semiconductor

NCE0157T Features

• Mosfet
• VDS = 100V,ID =57A RDS(ON) < 16mΩ @ VGS=10V (Typ:11.7mΩ)
• Special process technology for high ESD capability
• High density cell design for ultra low Rdson

PDF File Details

Part number:

NCE0157T

Manufacturer:

NCE Power Semiconductor

File Size:

340.42kb

Download:

📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The NCE0157T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide v

NCE0157T Application

• Applications GENERAL FEATURES
• VDS = 100V,ID =57A RDS(ON) < 16mΩ @ VGS=10V (Typ:11.7mΩ)
• Special process technology for high E

TAGS

NCE0157T

NCE Power Semiconductor

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