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NCE0157A2 - N-Channel Enhancement Mode Power MOSFET

Product Overview

NCE Power Semiconductor

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NCE0157A2 N-Channel Enhancement Mode Power MOSFET by NCE Power Semiconductor - Datasheet Preview — Datasheet preview – NCE0157A2

Datasheet Details

Part number	NCE0157A2
Manufacturer	NCE Power Semiconductor
File Size	683.92 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE0157A2 Datasheet
Additional preview pages of the NCE0157A2 datasheet.

Product details

Description

The NCE0157A2 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS = 100V,ID =57A RDS(ON) < 14.5mΩ @ VGS=10V (Typ:12.5mΩ) Schematic diagram.
Special process technology for high ESD capability.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.

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Published: Jun 2, 2018 |