NCE2025I Datasheet, Mosfet, NCE Power Semiconductor

NCE2025I Features

• Mosfet
• VDS =20V,ID =25A RDS(ON) <13mΩ @ VGS=10V (Typ:10.5mΩ)
• High density cell design for ultra low Rdson
• Fully characterized avalanche voltage and current

PDF File Details

Part number:

NCE2025I

Manufacturer:

NCE Power Semiconductor

File Size:

339.33kb

Download:

📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The NCE2025I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide v

NCE2025I Application

• Applications General Features
• VDS =20V,ID =25A RDS(ON) <13mΩ @ VGS=10V (Typ:10.5mΩ)
• High density cell design for ultra low R

TAGS

NCE2025I

NCE Power Semiconductor

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