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NCE3035G

N-Channel Enhancement Mode Power MOSFET

NCE3035G Features

* VDS =30V,ID =35A RDS(ON) < 7.0mΩ @ VGS=10V RDS(ON) < 12mΩ @ VGS=4.5V

* High density cell design for ultra low Rdson

* Fully characterized avalanche voltage and current

* Good stability and uniformity with high EAS

* Excellent package for good heat dissipation

* Special proc

NCE3035G Datasheet (333.82 KB)

Preview of NCE3035G PDF

Datasheet Details

Part number:

NCE3035G

Manufacturer:

NCE Power Semiconductor

File Size:

333.82 KB

Description:

N-channel enhancement mode power mosfet.

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TAGS

NCE3035G N-Channel Enhancement Mode Power MOSFET NCE Power Semiconductor

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