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NCE3035Q - N-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

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Datasheet Details

Part number	NCE3035Q
Manufacturer	NCE Power Semiconductor
File Size	319.25 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE3035Q-NCEPowerSemiconductor.pdf

NCE3035Q Product details

Description

The NCE3035Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS =30V,ID =35A RDS(ON) < 7.0mΩ @ VGS=10V RDS(ON) < 12mΩ @ VGS=4.5V.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability.

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Published: Jun 2, 2018 |