NCE3060G Datasheet, Mosfet, NCE Power Semiconductor

NCE3060G Features

• Mosfet
• VDS =30V,ID =60A RDS(ON) <4.0 mΩ @ VGS=10V RDS(ON) <5.5 mΩ @ VGS=4.5V
• High density cell design for ultra low Rdson
• Fully characterized avalanche voltage an

PDF File Details

Part number:

NCE3060G

Manufacturer:

NCE Power Semiconductor

File Size:

342.99kb

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The NCE3060G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide v

NCE3060G Application

• Applications General Features
• VDS =30V,ID =60A RDS(ON) <4.0 mΩ @ VGS=10V RDS(ON) <5.5 mΩ @ VGS=4.5V
• High density cell design fo

TAGS

NCE3060G

NCE Power Semiconductor

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