NCE30D0808J Datasheet, Mosfet, NCE Power Semiconductor

NCE30D0808J Features

• Mosfet
• VDS = 30V,ID = 7.7A RDS(ON) <25mΩ @ VGS=10V RDS(ON) <35mΩ @ VGS=4.5V
• High Power and current handing capability
• Lead free product is acquired
• Surf

PDF File Details

Part number:

NCE30D0808J

Manufacturer:

NCE Power Semiconductor

File Size:

280.71kb

Download:

📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The NCE30D0808J uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use as a

NCE30D0808J Application

• Applications Genera Features
• VDS = 30V,ID = 7.7A RDS(ON) <25mΩ @ VGS=10V RDS(ON) <35mΩ @ VGS=4.5V
• High Power and current handin

TAGS

NCE30D0808J

NCE Power Semiconductor

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