NCE30H32WD Datasheet, Mosfet, NCE Power Semiconductor

NCE30H32WD Features

• Mosfet
• VDS =30V ,ID =320A RDS(ON) < 1.6mΩ @ VGS=10V
• High density cell design for ultra low Rdson
• Fully characterized avalanche voltage and current
• Good

PDF File Details

Part number:

NCE30H32WD

Manufacturer:

NCE Power Semiconductor

File Size:

344.84kb

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The NCE30H32WD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide

NCE30H32WD Application

• Applications General Features
• VDS =30V ,ID =320A RDS(ON) < 1.6mΩ @ VGS=10V
• High density cell design for ultra low Rdson
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TAGS

NCE30H32WD

NCE Power Semiconductor

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