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NCE30H32WD N-Channel Enhancement Mode Power MOSFET

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Description

http://www.ncepower.com Pb Free Product NCE30H32WD NCE N-Channel Enhancement Mode Power MOSFET .
The NCE30H32WD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number
NCE30H32WD
Manufacturer
NCE Power Semiconductor
File Size
344.84 KB
Datasheet
NCE30H32WD-NCEPowerSemiconductor.pdf
Description
N-Channel Enhancement Mode Power MOSFET

Features

* VDS =30V ,ID =320A RDS(ON) < 1.6mΩ @ VGS=10V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipation
* Special process technology for high

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