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NCE30H32WD - N-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

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Datasheet Details

Part number	NCE30H32WD
Manufacturer	NCE Power Semiconductor
File Size	344.84 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE30H32WD-NCEPowerSemiconductor.pdf

NCE30H32WD Product details

Description

The NCE30H32WD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS =30V ,ID =320A RDS(ON) < 1.6mΩ @ VGS=10V.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability Schematic diagram.

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Published: Jun 2, 2018 |