NCEP0190G Datasheet (NCE Power Semiconductor) - N-Channel Super Trench Power MOSFET

NCEP0190G, N-Channel Super Trench Power MOSFET

The NCEP0190G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

This device is ideal for high-frequency switching

NCEP0190G Features

* VDS =100V,ID =90A RDS(ON)=5.8mΩ (typical) @ VGS=10V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 150 °C operating temperature

* Pb-free lead plating

* 100% UIS tested Schematic Diagram DDDD DDDD Application

* DC/DC Converter