NCEP050N10M Datasheet - NCE Power Semiconductor

NCEP050N10M - N-Channel Super Trench II Power MOSFET

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

This device is ideal for high-frequency

NCEP050N10M Features

* VDS =100V,ID =123A RDS(ON)=4.2mΩ , typical @ VGS=10V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 175 °C operating temperature

* Pb-free lead plating 100% UIS TESTED! 100% ΔVds TESTED! TO-220-3L Schematic Diagram Package Marking and Order

Datasheet Details

NCEP050N10M

NCE Power Semiconductor

736.64 KB

N-channel super trench ii power mosfet.

📁 Related Datasheet

📌 All Tags