NCEP050N10M N-Channel Super Trench II Power MOSFET

NCE Power Semiconductor

Description

NCEP050N10M NCE N-Channel Super Trench II Power MOSFET .
The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.

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Datasheet Specifications

Part number: NCEP050N10M
Manufacturer: NCE Power Semiconductor
File Size: 736.64 KB
Datasheet: NCEP050N10M-NCEPowerSemiconductor.pdf
Description: N-Channel Super Trench II Power MOSFET

Features

* VDS =100V,ID =123A RDS(ON)=4.2mΩ , typical @ VGS=10V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 175 °C operating temperature
* Pb-free lead plating 100% UIS TESTED! 100% ΔVds TESTED! TO-220-3L Schematic Diagram Package Marking and Order

Applications

* that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or

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NCEP050N10M N-Channel Super Trench Power MOSFET NCE Power Semiconductor

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