NCEP055NH40GU Datasheet - NCE Power Semiconductor

NCEP055NH40GU - N-Channel Super Trench III Power MOSFET

The NCEP055NH40GU uses Super Trench III technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

This device is ideal for high-frequency sw

NCEP055NH40GU Features

* VDS =40V,ID =68A RDS(ON)=4.5mΩ (typical) @ VGS=10V RDS(ON)=7.7mΩ (typical) @ VGS=4.5V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 150 °C operating temperature

* Pb-free lead plating 100% UIS TESTED! 100% ΔVds TESTED! PDFN 5X6-8L Top View

Datasheet Details

NCEP055NH40GU

NCE Power Semiconductor

726.55 KB

N-channel super trench iii power mosfet.

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