NCEP078N10AK - N-Channel Super Trench II Power MOSFET

NCE Power Semiconductor

Datasheet Details

Part number	NCEP078N10AK
Manufacturer	NCE Power Semiconductor
File Size	489.45 KB
Description	N-Channel Super Trench II Power MOSFET
Datasheet	NCEP078N10AK-NCEPowerSemiconductor.pdf

General

The series of devices uses Super Trench II technology that is.
VDS =100V,ID =75A uniquely optimized to provide the most efficient high frequency RDS(ON)=7.2mΩ , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=9.4mΩ , typical@ VGS=4.5V losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching.
Excellent gate charge x RDS(on) product(FOM) and synchronous rectification.
V.

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Published: Jan 22, 2025 |