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NCEP078N10G N-Channel Super Trench II Power MOSFET

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Description

NCEP078N10G NCE N-Channel Super Trench II Power MOSFET .
The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency.

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Datasheet Specifications

Part number
NCEP078N10G
Manufacturer
NCE Power Semiconductor
File Size
1.05 MB
Datasheet
NCEP078N10G-NCEPowerSemiconductor.pdf
Description
N-Channel Super Trench II Power MOSFET

Features

* uniquely optimized to provide the most efficient high frequency
* VDS =100V,ID =75A switching performance. Both conduction and switching power RDS(ON)=7.4mΩ , typical@ VGS=10V losses are minimized due to an extremely low combination of
* Excellent gate charge x RDS(on) product(FOM) RDS(

Applications

* that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or

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