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NCEP078N10G - N-Channel Super Trench II Power MOSFET

NCE Power Semiconductor

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Datasheet Details

Part number	NCEP078N10G
Manufacturer	NCE Power Semiconductor
File Size	1.05 MB
Description	N-Channel Super Trench II Power MOSFET
Datasheet	NCEP078N10G-NCEPowerSemiconductor.pdf

NCEP078N10G Product details

Description

The series of devices uses Super Trench II technology that is General

Features

uniquely optimized to provide the most efficient high frequency.
VDS =100V,ID =75A switching performance. Both conduction and switching power RDS(ON)=7.4mΩ , typical@ VGS=10V losses are minimized due to an extremely low combination of.
Excellent gate charge x RDS(on) product(FOM) RDS(ON) and Qg. This device is ideal for high-frequency switching.
Very low on-resistance RDS(on) and synchronous rectification.
150 °C operating temperature.

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Published: Jan 22, 2025 |