NCEP095N10AG N-Channel Super Trench II Power MOSFET

NCE Power Semiconductor

Description

NCEP095N10AG NCE N-Channel Super Trench II Power MOSFET .
The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.

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Datasheet Specifications

Part number: NCEP095N10AG
Manufacturer: NCE Power Semiconductor
File Size: 328.72 KB
Datasheet: NCEP095N10AG-NCEPowerSemiconductor.pdf
Description: N-Channel Super Trench II Power MOSFET

Features

* VDS =100V,ID =60A RDS(ON)=8.5mΩ , typical@ VGS=10V RDS(ON)=10.5mΩ , typical@ VGS=4.5V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 150 °C operating temperature
* Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! DFN 5X6 Top View Bot

Applications

* that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose

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NCEP095N10AG N-Channel Super Trench Power MOSFET NCE Power Semiconductor

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