NCEP18N10AQ Datasheet - NCE Power Semiconductor

NCEP18N10AQ N-Channel Super Trench II Power MOSFET

The NCEP18N10AQ uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switc.

NCEP18N10AQ Features

* VDS =100V,ID =35A RDS(ON)=16.0mΩ (typical) @ VGS=10V RDS(ON)=18.0mΩ (typical) @ VGS=4.5V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 150 °C operating temperature

* Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! DFN 3.3X3.3 Top Vi

NCEP18N10AQ Datasheet (322.09 KB)

NCEP18N10AQ Datasheet Preview — Preview of NCEP18N10AQ PDF

Datasheet Details

Part number:

NCEP18N10AQ

Manufacturer:

NCE Power Semiconductor

File Size:

322.09 KB

Description:

N-channel super trench ii power mosfet.

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