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NCEP6020AS

N-Channel Super Trench Power MOSFET

NCEP6020AS Features

* VDS =60V,ID =20A RDS(ON)=4.0mΩ (typical) @ VGS=10V RDS(ON)=4.6mΩ (typical) @ VGS=4.5V Schematic diagram

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 150 °C operating temperature

* Pb-free lead plating

* 100% UIS tested Marking and pin

NCEP6020AS General Description

The NCEP6020AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching.

NCEP6020AS Datasheet (446.10 KB)

Preview of NCEP6020AS PDF

Datasheet Details

Part number:

NCEP6020AS

Manufacturer:

NCE Power Semiconductor

File Size:

446.10 KB

Description:

N-channel super trench power mosfet.

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TAGS

NCEP6020AS N-Channel Super Trench Power MOSFET NCE Power Semiconductor

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