NCE80H11 - N-Channel Enhancement Mode Power MOSFET
NCE80H11 Features
* VDS =80V,ID =105A RDS(ON) < 8mΩ @ VGS=10V (Typ:6.3mΩ) Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipation
* Special
