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NCE3012S - P-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

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Datasheet Details

Part number	NCE3012S
Manufacturer	NCE Power Semiconductor
File Size	369.90 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	NCE3012S-NCEPowerSemiconductor.pdf

NCE3012S Product details

Description

The NCE3012S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

Features

VDS = -30V,ID = -12A RDS(ON) < 20mΩ @ VGS=-4.5V RDS(ON) < 15mΩ @ VGS=-10V Schematic diagram.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package.

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Published: May 22, 2015 |