NCEP050N10M - N-Channel Super Trench II Power MOSFET

NCE Power Semiconductor

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Datasheet Details

Part number	NCEP050N10M
Manufacturer	NCE Power Semiconductor
File Size	736.64 KB
Description	N-Channel Super Trench II Power MOSFET
Datasheet	NCEP050N10M-NCEPowerSemiconductor.pdf

NCEP050N10M Product details

Description

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.This device is ideal for high-frequency switching and synchronous rectification.Application DC/DC Converter Ideal for high-frequency switching and synchronous rectification General

Features

VDS =100V,ID =123A RDS(ON)=4.2mΩ , typical @ VGS=10V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
175 °C operating temperature.
Pb-free lead plating 100% UIS TESTED! 100% ΔVds TESTED! TO-220-3L Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package NCEP050N10M NCEP050N10M TO-220-3L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter.

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Published: Jul 19, 2025 |