2SB984 Datasheet - NEC

2SB984 PNP SIlicon Transistor

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. Pin Out Drain (Pin 2) TA = 25°C VDS VGS Drain to Source Voltage Gate to Source Voltage Continuous Drain Current (Package limited), TC = 25°C ID Continuous Drain Current (Silicon limited), TC = 25°C Conti.

2SB984 Features

* Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Pb Free Terminal Plating RoHS Compliant Halogen Free TO-220 Plastic Package TA = 25°C VDS Qg Qgd RDS(on) VGS(th) PRODUCT SUMMARY TYPICAL VALUE 60 14 2.3 VGS = 6V VGS = 10V 3.0 14 11 UNIT V nC nC mΩ mΩ V Drain to Source Voltage Gate Charge

2SB984 Datasheet (203.98 KB)