Part number:
2SJ607
Manufacturer:
NEC
File Size:
114.56 KB
Description:
Mos field effect transistor.
* Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS =
* 10 V, ID =
* 42 A) RDS(on)2 = 16 mΩ MAX. (VGS =
* 4.0 V, ID =
* 42 A)
* Low input capacitance: Ciss = 7500 pF TYP. (VDS =
* 10 V, VGS = 0 V)
* Built-in gate protection diode No
2SJ607
NEC
114.56 KB
Mos field effect transistor.
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