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2SK2412 - SWITCHING N-CHANNEL POWER MOSFET

Datasheet Summary

Description

The 2SK2412 is N-Channel MOS Field Effect Transistor designed for high speed switching applications.

Features

  • Low On-Resistance RDS(on)1 = 70 mΩ MAX. (@ VGS = 10 V, ID = 10 A) 15.0 ±0.3 3 ±0.1 4 ±0.2 12.0 ±0.2 13.5 MIN. RDS(on)2 = 95 mΩ MAX. (@ VGS = 4 V, ID = 10 A).
  • Low Ciss Ciss = 860 pF TYP.
  • Built-in G-S Gate Protection Diodes.
  • High Avalanche Capability Ratings.

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Datasheet preview – 2SK2412

Datasheet Details

Part number 2SK2412
Manufacturer NEC
File Size 114.89 KB
Description SWITCHING N-CHANNEL POWER MOSFET
Datasheet download datasheet 2SK2412 Datasheet
Additional preview pages of the 2SK2412 datasheet.

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Full PDF Text Transcription

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2412 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2412 is N-Channel MOS Field Effect Transistor designed for high speed switching applications. PACKAGE DIMENSIONS (in millimeters) 10.0 ±0.3 4.5 ±0.2 3.2 ±0.2 2.7 ±0.2 FEATURES • Low On-Resistance RDS(on)1 = 70 mΩ MAX. (@ VGS = 10 V, ID = 10 A) 15.0 ±0.3 3 ±0.1 4 ±0.2 12.0 ±0.2 13.5 MIN. RDS(on)2 = 95 mΩ MAX. (@ VGS = 4 V, ID = 10 A) • Low Ciss Ciss = 860 pF TYP. • Built-in G-S Gate Protection Diodes • High Avalanche Capability Ratings QUALITY GRADE Standard Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. 0.
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