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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2415, 2SK2415-Z
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2415 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.
PACKAGE DIMENSIONS (in millimeters)
+ 0.2 1.5 – 0.1
6.5 ± 0.2
2.3 ± 0.2 0.5 ± 0.1
FEATURES
1.6 ± 0.2
5.0 ± 0.2 4
RDS(on)1 = 0.10 Ω MAX. (@ VGS = 10 V, ID = 4.0 A) RDS(on)2 = 0.15 Ω MAX. (@ VGS = 4 V, ID = 4.0 A)
1 2 3
• Low Ciss
Ciss = 570 pF TYP.
1.3 MAX.
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
2.3 2.3
7.0 MAX. 5.5 ± 0.2 13.7 MIN.
• Low On-Resistance
0.6 ± 0.1
0.