UPA1709 N-Channel Power MOSFET

NEC

Description

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1709 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE .
This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management switch. Low on-resistance.

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Datasheet Specifications

Part number: UPA1709
Manufacturer: NEC
File Size: 79.46 KB
Datasheet: UPA1709_NEC.pdf
Description: N-Channel Power MOSFET

Features

* Low on-resistance RDS(on)1 = 9.3 mΩ (TYP. ) (VGS = 10 V, ID = 4.5 A) RDS(on)2 = 13.8 mΩ (TYP. ) (VGS = 4.5 V, ID = 4.5 A)
* Low Ciss : Ciss = 1850 pF (TYP. )
* Built-in G-S protection diode
* Small and surface mount package (Power SOP8) PACKAGE DRAWING (Unit : mm) 8 5

Applications

* of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic

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UPA1709 N-Channel Power MOSFET NEC

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