UPA1709 - N-Channel Power MOSFET
UPA1709 Features
* Low on-resistance RDS(on)1 = 9.3 mΩ (TYP.) (VGS = 10 V, ID = 4.5 A) RDS(on)2 = 13.8 mΩ (TYP.) (VGS = 4.5 V, ID = 4.5 A)
* Low Ciss : Ciss = 1850 pF (TYP.)
* Built-in G-S protection diode
* Small and surface mount package (Power SOP8) PACKAGE DRAWING (Unit : mm) 8 5
