* Low on-state resistance RDS(on)1 = 33 mΩ MAX. (VGS =
* 10 V, ID =
* 3 A) 1.44 RDS(on)2 = 59 mΩ MAX. (VGS =
* 4.5 V, ID =
* 3 A) 1.8 MAX. 1 5.37 MAX. 4 6.0 ±0.3 4.4 +0.10
* 0.05
* Low Ciss : Ciss = 830 pF TYP.
* Built-in G-S protection
UPA1717
NEC
65.44 KB
Switching p-channel power mos fet industrial use.
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1717
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
PACKAGE DRAWING (Unit : mm)
8 5 1,2,3 ; Source ; G.
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