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BLF6G38-10G, BLF6G38-10 WiMAX power LDMOS transistor

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Description

BLF6G38-10; BLF6G38-10G WiMAX power LDMOS transistor Rev.01 * 3 February 2009 www.DataSheet4U.com Product data sheet 1.Product profile 1.1.
10 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz.

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This datasheet PDF includes multiple part numbers: BLF6G38-10G, BLF6G38-10. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
BLF6G38-10G, BLF6G38-10
Manufacturer
NXP ↗ Semiconductors
File Size
135.34 KB
Datasheet
BLF6G38-10_NXPSemiconductors.pdf
Description
WiMAX power LDMOS transistor
Note
This datasheet PDF includes multiple part numbers: BLF6G38-10G, BLF6G38-10.
Please refer to the document for exact specifications by model.

Features

* I Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz), a supply voltage of 28 V and an IDq of 130 mA: I Qualified up to a maximum VDS operation of 32

Applications

* at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 1-carrier N-CDMA[1] [1] [2] f (MHz) 3400 to 3600 VDS (V) 28 PL(AV) (W) 2 Gp (dB) 14 ηD (%) 20 ACPR885k (dBc)
* 49[2] ACPR1980k

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