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AFM907N RF Power LDMOS Transistor

AFM907N Description

NXP Semiconductors Technical Data RF Power LDMOS Transistor High Ruggedness N *Channel Enhancement *Mode Lateral MOSFET Designed for h.

AFM907N Features

* Characterized for operation from 136 to 941 MHz
* Unmatched input and output allowing wide frequency range utilization
* Integrated ESD protection
* Integrated stability enhancements
* Wideband
* full power across the band
* Exceptional thermal performance
* Ext

AFM907N Applications

* with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large
* signal, common
* source amplifier applications in handheld radio equipment. Wideband Performance (In 350
* 520 MHz reference circuit, 7.5 Vdc, TA = 25

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Datasheet Details

Part number
AFM907N
Manufacturer
NXP ↗
File Size
1.51 MB
Datasheet
AFM907N-NXP.pdf
Description
RF Power LDMOS Transistor

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Power LDMOS Transistor NXP
NXP AFM907N-like datasheet