AFM907N RF Power LDMOS Transistor

NXP

Description

NXP Semiconductors Technical Data RF Power LDMOS Transistor High Ruggedness N *Channel Enhancement *Mode Lateral MOSFET Designed for h.

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AFM907N Datasheet Preview — Preview of AFM907N PDF

Datasheet Specifications

Part number: AFM907N
Manufacturer: NXP ↗
File Size: 1.51 MB
Datasheet: AFM907N-NXP.pdf
Description: RF Power LDMOS Transistor

Features

* Characterized for operation from 136 to 941 MHz
* Unmatched input and output allowing wide frequency range utilization
* Integrated ESD protection
* Integrated stability enhancements
* Wideband
* full power across the band
* Exceptional thermal performance
* Ext

Applications

* with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large
* signal, common
* source amplifier applications in handheld radio equipment. Wideband Performance (In 350
* 520 MHz reference circuit, 7.5 Vdc, TA = 25

AFM907N Distributors

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AFM907N Power LDMOS Transistor NXP

NXP AFM907N-like datasheet

AFM906N