Datasheet Details
- Part number
- BLF277
- Manufacturer
- NXP ↗
- File Size
- 101.84 KB
- Datasheet
- BLF277_PhilipsSemiconductors.pdf
- Description
- VHF power MOS transistor
BLF277 Description
DISCRETE SEMICONDUCTORS DATA SHEET BLF277 VHF power MOS transistor Product speciļ¬cation September 1992 Philips Semiconductors Product speciļ¬cation.
Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range.
BLF277 Features
* High power gain
* Easy power control
* Gold metallization ensures excellent reliability
* Good thermal stability
BLF277 Applications
* in the VHF frequency range. The transistor is encapsulated in a 6-lead, SOT119 flange envelope, with a ceramic cap. All leads are isolated from the flange. Fig.1 Simplified outline and symbol. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Re
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