* High power gain
* Easy power control
* Gold metallization ensures excellent reliability
* Good thermal stability
* Withstands full load mismatch. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier app
BLF277
101.84 KB
Vhf power mos transistor.
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BLF277 VHF power MOS transistor
Product specification September 1992
Philips Semiconductors
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