BLF277 Datasheet - NXP

BLF277 - VHF power MOS transistor

Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range.

The transistor is encapsulated in a 6-lead, SOT119 flange envelope, with a ceramic cap.

All leads are isolated from the flange.

Fig.1 Simplified outline and symbo

Datasheet Details

BLF277

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Vhf power mos transistor.

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