BLF277 VHF power MOS transistor

NXP

Description

DISCRETE SEMICONDUCTORS DATA SHEET BLF277 VHF power MOS transistor Product speciﬁcation September 1992 Philips Semiconductors Product speciﬁcation.
Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range.

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Datasheet Specifications

Part number: BLF277
Manufacturer: NXP ↗
File Size: 101.84 KB
Datasheet: BLF277_PhilipsSemiconductors.pdf
Description: VHF power MOS transistor

Features

* High power gain
* Easy power control
* Gold metallization ensures excellent reliability
* Good thermal stability

Applications

* in the VHF frequency range. The transistor is encapsulated in a 6-lead, SOT119 flange envelope, with a ceramic cap. All leads are isolated from the flange. Fig.1 Simplified outline and symbol. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Re

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BLF277 VHF power MOS transistor NXP

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