BLV935 Datasheet - NXP

BLV935 UHF power transistor

NPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor has internal input matching by means of MOS capacitors and is encapsulated in a 6-lead SOT273 flange envelope with a ceramic cap. All leads are isolated from the flange. handbook, halfpage c b P.

BLV935 Features

* Emitter ballasting resistors for an optimum temperature profile

* Gold metallization ensures excellent reliability

* Internal input matching to achieve high power gain and easy design of wideband circuits. APPLICATIONS

* Base stations in the 820 to 980 MHz range. 1

BLV935 Datasheet (85.54 KB)