BUK556-60H Datasheet - NXP

BUK556-60H, PowerMOS transistor Logic level FET

Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL .
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

Applications

* BUK556-60H QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 5 V MAX. 60 60 150 175 22 UNIT V A W ˚C mΩ PINNING - TO220AB PIN 1 2 3 tab gate drain source drain

BUK556-60H_PhilipsSemiconductors.pdf