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BUT11F - Silicon Diffused Power Transistor

BUT11F Description

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11F GENERAL .
High-voltage, high-speed glass-passivated npn power transistor in a SOT186 envelope with electrically insulated mounting base,intended for use in conv.

BUT11F Applications

* These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to full

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