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BUT11F Datasheet - NXP

BUT11F Silicon Diffused Power Transistor

High-voltage, high-speed glass-passivated npn power transistor in a SOT186 envelope with electrically insulated mounting base,intended for use in converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Col.

BUT11F_PhilipsSemiconductors.pdf

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Datasheet Details

Part number:

BUT11F

Manufacturer:

NXP ↗

File Size:

116.85 KB

Description:

Silicon diffused power transistor.

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