Part number:
PBSS5480X
Manufacturer:
File Size:
138.39 KB
Description:
Pnp low vcesat (biss) transistor.
PBSS5480X_PhilipsSemiconductors.pdf
Datasheet Details
Part number:
PBSS5480X
Manufacturer:
File Size:
138.39 KB
Description:
Pnp low vcesat (biss) transistor.
PBSS5480X, PNP low VCEsat (BISS) transistor
PNP low VCEsat (BISS) transistor in a SOT89 (SC-62) plastic package.
NPN complement: PBSS4480X.
MARKING TYPE NUMBER PBSS5480X Note 1.
* = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
MARKING CODE(1) *1Z 3 2 1 PBSS5480X QUICK REFERENCE DATA SYMBOL VCEO IC ICM
PBSS5480X Features
* High hFE and low VCEsat at high current operation
* High collector current IC: 4 A
* High efficiency leading to less heat generation. APPLICATIONS
* Medium power peripheral drivers (e.g. fans and motors)
* Strobe flash units for digital still cameras and mob
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