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PBSS5480X Datasheet - NXP

PBSS5480X_PhilipsSemiconductors.pdf

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Datasheet Details

Part number:

PBSS5480X

Manufacturer:

NXP ↗

File Size:

138.39 KB

Description:

Pnp low vcesat (biss) transistor.

PBSS5480X, PNP low VCEsat (BISS) transistor

PNP low VCEsat (BISS) transistor in a SOT89 (SC-62) plastic package.

NPN complement: PBSS4480X.

MARKING TYPE NUMBER PBSS5480X Note 1.

* = p: made in Hong Kong.

* = t: made in Malaysia.

* = W: made in China.

MARKING CODE(1) *1Z 3 2 1 PBSS5480X QUICK REFERENCE DATA SYMBOL VCEO IC ICM

PBSS5480X Features

* High hFE and low VCEsat at high current operation

* High collector current IC: 4 A

* High efficiency leading to less heat generation. APPLICATIONS

* Medium power peripheral drivers (e.g. fans and motors)

* Strobe flash units for digital still cameras and mob

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