PBSS5480X Datasheet - NXP

PBSS5480X PNP low VCEsat (BISS) transistor

PNP low VCEsat (BISS) transistor in a SOT89 (SC-62) plastic package. NPN complement: PBSS4480X. MARKING TYPE NUMBER PBSS5480X Note 1. * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. MARKING CODE(1) *1Z 3 2 1 PBSS5480X QUICK REFERENCE DATA SYMBOL VCEO IC ICM .

PBSS5480X Features

* High hFE and low VCEsat at high current operation

* High collector current IC: 4 A

* High efficiency leading to less heat generation. APPLICATIONS

* Medium power peripheral drivers (e.g. fans and motors)

* Strobe flash units for digital still cameras and mob

PBSS5480X_PhilipsSemiconductors.pdf