* Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Exposed heat sink for excellent thermal and electrical conductivity Leadl
PBSS9410PA Datasheet (200.84 KB)
PBSS9410PA
200.84 KB
2.7 a pnp low vcesat (biss) transistor.
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PBSS9410PA
100 V, 2.7 A PNP low VCEsat (BISS) transistor
Rev. 01
* 11 May 2010 Product data sheet
1. Product profile
1.1.
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