PBSS9110Z 1A PNP low VCEsat (BISS) transistor

NXP Semiconductors

PBSS9110Z Description

PBSS9110Z 100 V, 1 A PNP low VCEsat (BISS) transistor Rev.03 * 11 December 2009 www.DataSheet4U.com Product data sheet 1.Product profile .
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.

PBSS9110Z Features

* Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventio

PBSS9110Z Applications

* High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High-voltage motor control High-voltage power switches (e. g. motors, fans) Automotive applications 1.4 Quick reference data Table 1. VCEO IC ICM RCEsat [1] Quick reference data Condi

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Datasheet Details

Part number: PBSS9110Z
Manufacturer: NXP ↗ Semiconductors
File Size: 231.84 KB
Datasheet: PBSS9110Z_NXPSemiconductors.pdf
Description: 1A PNP low VCEsat (BISS) transistor

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PNP low VCEsat BISS transistor NXP Semiconductors

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