* Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventio
PBSS9110Z Datasheet (231.84 KB)
PBSS9110Z
NXP ↗ Semiconductors
231.84 KB
1a pnp low vcesat (biss) transistor.
PBSS9110Z
100 V, 1 A PNP low VCEsat (BISS) transistor
Rev. 03
* 11 December 2009
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