PHT6N03LT Datasheet (NXP) - TrenchMOS transistor Logic level FET

PHT6N03LT, TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor using ’trench’ technology.

The device has very low on-state resistance.

It is intended for use in dc to dc converters and general purpose switching applications.

The PHT6N03LT is supplied in the SOT223 surface

PHT6N03LT Features

* ’Trench’ technology

* Very low on-state resistance

* Fast switching

* Stable off-state characteristics

* High thermal cycling performance

* Surface mounting package PHT6N03LT SYMBOL d QUICK REFERENCE DATA VDSS = 30 V ID = 5.9 A g s RDS(ON) ≤ 30 m