PHT6N06LT TrenchMOS transistor Logic level FET

NXP

Description

Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET GENERAL .
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting.

📥 Download Datasheet

PHT6N06LT Datasheet Preview — Preview of PHT6N06LT PDF

Datasheet Specifications

Part number: PHT6N06LT
Manufacturer: NXP ↗
File Size: 67.62 KB
Datasheet: PHT6N06LT_PhilipsSemiconductors.pdf
Description: TrenchMOS transistor Logic level FET

Applications

* PHT6N06LT QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Tsp = 25 ˚C Drain current (DC) Tamb = 25 ˚C Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V MAX. 55 5.5 2.5 8.3 150 150 UNIT V A A W ˚C mΩ PINNIN

PHT6N06LT Distributors

📁 Related Datasheet

PHT608C PHT PHT-10x-xx-L-x PHT-11x-xx-L-x PHT-12x-xx-L-x PHT-13x-xx-L-x

📌 All Tags

PHT6N06LT TrenchMOS transistor Logic level FET NXP

NXP PHT6N06LT-like datasheet