PHT6N06LT Datasheet, Fet, NXP

PHT6N06LT Features

• Fet very low on-state resistance and has integral zener diodes giving ESD protection. It is intended for use in DC-DC converters and general purpose switching applications. PHT6N06LT QUIC

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PHT6N06LT

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NXP ↗

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📄 Datasheet

Description:

Trenchmos transistor logic level fet. N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. The device

PHT6N06LT Application

• Applications PHT6N06LT QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Tsp = 25 ˚C Drain cur

TAGS

PHT6N06LT

NXP

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