Part number:
PHT6NQ10T
Manufacturer:
File Size:
78.56 KB
Description:
N-channel trenchmos transistor.
* ’Trench’ technology
* Low on-state resistance
* Fast switching
* Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 100 V ID = 6.5 A g RDS(ON) ≤ 90 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect transistor in a plastic envelope using ’
PHT6NQ10T Datasheet (78.56 KB)
PHT6NQ10T
78.56 KB
N-channel trenchmos transistor.
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