PHT6N03T TrenchMOS transistor Standard level FET

NXP

Description

Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET GENERAL .
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting.

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Datasheet Specifications

Part number: PHT6N03T
Manufacturer: NXP ↗
File Size: 70.30 KB
Datasheet: PHT6N03T_PhilipsSemiconductors.pdf
Description: TrenchMOS transistor Standard level FET

Applications

* PHT6N03T QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Tsp = 25 ˚C Drain current (DC) Tamb = 25 ˚C Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX. 30 12.8 5.9 8.3 150 30 UNIT V A A W ˚C mΩ PINNIN

PHT6N03T Distributors

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PHT6N03T TrenchMOS transistor Standard level FET NXP

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