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PMDPB55XP dual P-channel Trench MOSFET

PMDPB55XP Description

PMDPB55XP 020 -6 20 V, dual P-channel Trench MOSFET Rev.3 * 4 June 2012 Product data sheet 1.Product profile 1.1 General .
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plas.

PMDPB55XP Features

* Very fast switching
* Trench MOSFET technology
* Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm

PMDPB55XP Applications

* Charging switch for portable devices
* DC/DC converters
* Small brushless DC motor drive
* Power management in battery-driven portables
* Hard disc and computing power management 1.4 Quick reference data Table 1. Symbol Per transistor VDS VGS ID RDSon drain-source voltage gate

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dual P-channel Trench MOSFET NXP Semiconductors
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